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 2 www.fairchildsemi.com FFPF10UP30ST 10 A, 300 V, Ultrafast Diode Electrical Characteristics (per diode) Ta = 25°C unless otherwise noted *Pulse Test: Pulse Width=300 μs, Duty Cycle=2% Symbol Parameter Min. Typ. Max. Unit VF * IF = 10 A IF = 10 A TC = 25 °C TC = 150 °C - - - - 1.4 1.2 V V IR * VR = 300 V VR = 300 V TC = 25 ° C TC = 150 °C - - - - 100 500 μA μA trr IF =1 A, di/dt = 100 A/μs, VCC = 30 V IF =10 A, di/dt = 200 A/μs, VCC = 195 V TC = 25 °C TC = 25 °C - - - - 35 45 ns ns ta tb Qrr IF =10 A, di/dt = 200 A/μs, VCC = 195 V TC = 25 °C TC = 25 °C TC = 25 ° C - - - 11 13 20 - - - ns ns nC WAVL Avalanche Energy (L = 2 0 mH) 20 - - mJ ?2005 Fairchild Semiconductor Cor poration FFPF10UP30ST Rev. A |